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n type sic crystal online manufacture

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kaufen 6-Zoll-4H-SiC-Substrat N Typ P SBD-Qualität 350 μm Online Hersteller

6-Zoll-4H-SiC-Substrat N Typ P SBD-Qualität 350 μm
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6inch 4H-SiC substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC boules (crystals) are grown, machined into ingots, and then sliced ... Lesen Sie weiter
2022-10-24 10:23:04
kaufen 6 Zoll 4H SiC N-Substrat 47,5 mm Keine sekundäre Ebene Online Hersteller

6 Zoll 4H SiC N-Substrat 47,5 mm Keine sekundäre Ebene
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μc MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview SiC boules (crystals) are grown, machined into ... Lesen Sie weiter
2022-10-24 10:26:17
kaufen 150 mm 4H SiC-Wafer, halbisolierendes Substrat, 6 Zoll, 350 μm Online Hersteller

150 mm 4H SiC-Wafer, halbisolierendes Substrat, 6 Zoll, 350 μm
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6inch 4H-SiC substrate D-level SI-Type 350.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview Sized for improved production With the 150 mm wafer size, we offer manufacturers the ... Lesen Sie weiter
2022-10-24 10:22:12
kaufen 4H sic Epitaxial- Oblate 0.015Ω•cm-0.025Ω•² 150,0 Millimeter +0mm/-0.2mm cm ≤4000/cm Online Hersteller

4H sic Epitaxial- Oblate 0.015Ω•cm-0.025Ω•² 150,0 Millimeter +0mm/-0.2mm cm ≤4000/cm
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4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. ... Lesen Sie weiter
2024-10-29 11:49:58
kaufen Sic n-Art Substrat Online Hersteller

Sic n-Art Substrat
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Currently silicon carbide (SiC) is widely used for ... Lesen Sie weiter
2022-10-09 16:57:15
kaufen 6-Zoll-N-Typ-Wafer P-MOS-Klasse 4H-SiC-Substrat 350,0 ± 25,0 um Online Hersteller

6-Zoll-N-Typ-Wafer P-MOS-Klasse 4H-SiC-Substrat 350,0 ± 25,0 um
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6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power ... Lesen Sie weiter
2022-10-24 10:21:10
kaufen 2-Zoll-SiC-Substrat 350 μm für anspruchsvolle Leistungselektronik Online Hersteller

2-Zoll-SiC-Substrat 350 μm für anspruchsvolle Leistungselektronik
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P-Level 2-Inch SiC Substrate 4H-N/SI260μm±25μm For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview High crystal quality ... Lesen Sie weiter
2024-10-29 11:49:58
kaufen 0.015Ω•cm-0.025Ω•Epitaxial- Oblaten-C-Gesichts-optischer polnischer Si-Gesicht CMP cm sic Online Hersteller

0.015Ω•cm-0.025Ω•Epitaxial- Oblaten-C-Gesichts-optischer polnischer Si-Gesicht CMP cm sic
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0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by ... Lesen Sie weiter
2024-10-29 11:49:58
kaufen 350 um 4H SiC-Substrat Online Hersteller

350 um 4H SiC-Substrat
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) is a non-oxide ceramic ... Lesen Sie weiter
2022-10-09 16:57:57
kaufen N-Typ 6-Zoll-4H-Siliziumkarbid-Substrat Primäre flache Länge 47,5 mm Online Hersteller

N-Typ 6-Zoll-4H-Siliziumkarbid-Substrat Primäre flache Länge 47,5 mm
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6inch 4H-SiC substrate N-Type D Grade 350.0±25.0μm MPD≤5/cm2 Resistivity 0.014Ω•cm—0.028Ω•cm for power and microwave devices Overview Silicon Carbide (SiC) is a covalent network solid. If we look at its ... Lesen Sie weiter
2022-10-24 10:22:34
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GaN Epitaxial Wafer

Gesichts-F.E. 2inch GaN Epitaxial Wafer C lackierte SI Art freie Stellung

F.E. lackierte GaN Substrates Resistivity > 10 ⁶ Ω·Cm Rf-Geräte

2-Zoll-freistehende SI-GaN-Substrate

Sic Epitaxial- Oblate

Abschrägen von SiC-Epitaxialwafern 150,0 mm +0 mm/-0,2 mm 350,0 um ± 25,0 um

4H-Kristallform-SiC-Epitaxie-Wafer Kantenabschrägung 350,0 µm ± 25,0 µm

Einzelner Kristall-sic Epitaxial- Oblaten-C-Gesichts-optischer polnischer Si-Gesicht CMP

NACHRICHT HINTERLASSEN

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