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n type sic crystal online manufacture

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kaufen 0,015 Ohm.cm bis 0,028 Ohm.cm Siliziumkarbidkristall Typ N Online Hersteller

0,015 Ohm.cm bis 0,028 Ohm.cm Siliziumkarbidkristall Typ N
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0.015~0.028ohm.Cm SiC Seed Crystal 4" P Grade N-Type Orientation 4.0°±0.2° SiC Seed Crystal 4" PGrade SiC CRYSTAL is an ultra-high purity silicon carbide grain or powder, specially manufactured to achieve ... Lesen Sie weiter
2022-09-27 17:01:16
kaufen sic Epitaxial- Oblate 6inch Online Hersteller

sic Epitaxial- Oblate 6inch
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P-SBD Grade 6inch 4H-SiC substrate N-Type Off-Axis:4°toward ±0.5 ° 6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate ... Lesen Sie weiter
2022-10-09 16:56:20
kaufen 47,5 Millimeter ± Epitaxial- Oblate 150,0 Millimeter +0mm/-0.2mm paralleles to<11-20>±1° 1,5 Millimeter sic Online Hersteller

47,5 Millimeter ± Epitaxial- Oblate 150,0 Millimeter +0mm/-0.2mm paralleles to<11-20>±1° 1,5 Millimeter sic
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47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single ... Lesen Sie weiter
2024-10-29 11:49:58
kaufen Sic Kristall 4&quot; des Barren-JDZJ01-001-002 d-Grad Online Hersteller

Sic Kristall 4" des Barren-JDZJ01-001-002 d-Grad
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SiC ingot crystal 4" P grade SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC. SiC is an excellent thermal conductor. Heat will flow ... Lesen Sie weiter
2025-04-04 22:43:20
kaufen 4&quot; P Grade Siliziumkarbid-Kristallwiderstand 0,015 Ohm.cm bis 0,028 Ohm.cm Online Hersteller

4" P Grade Siliziumkarbid-Kristallwiderstand 0,015 Ohm.cm bis 0,028 Ohm.cm
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4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm±2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor ... Lesen Sie weiter
2022-09-27 17:35:24
kaufen 4 Zoll 4H-SiC-Substrat P-Level N-Typ 350,0 ± 25,0 μM MPD ≤ 0,5/Cm2 Widerstand 0,015 Ω·Cm – 0,025 Ω·Cm Online Hersteller

4 Zoll 4H-SiC-Substrat P-Level N-Typ 350,0 ± 25,0 μM MPD ≤ 0,5/Cm2 Widerstand 0,015 Ω·Cm – 0,025 Ω·Cm
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4inch 4H-SiC substrate D-level N-Type 350.0±25.0μm MPD≤5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview High Temperature Devices Because SiC has a high thermal conductivity, SiC ... Lesen Sie weiter
2025-04-04 22:43:25
kaufen 100.0mm Silikon-Karbid-Kristall 4&quot; p-Grad 18.0mm Online Hersteller

100.0mm Silikon-Karbid-Kristall 4" p-Grad 18.0mm
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100.0mm±0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm±2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic ... Lesen Sie weiter
2022-09-27 17:01:26
kaufen JDZJ01-001-004 SiC-Ingot-Kristall 6&quot; P-Klasse Online Hersteller

JDZJ01-001-004 SiC-Ingot-Kristall 6" P-Klasse
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SiC ingot crystal 6" Pgrade Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th century silicon carbide has ... Lesen Sie weiter
2025-04-04 22:42:33
kaufen Flacher Silikon-Karbid-hauptsächlichkristall 4&quot; der Längen-32.5mm p-Grad 100.0mm Online Hersteller

Flacher Silikon-Karbid-hauptsächlichkristall 4" der Längen-32.5mm p-Grad 100.0mm
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Primary Flat Lengh 32.5mm±2.0mm SiC Seed Crystal 4" P Grade 100.0mm±0.5mm 0.015~0.028ohm.cm SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than ... Lesen Sie weiter
2022-09-27 17:01:05
kaufen 100.0mm Silikon-Karbid-Kristall 4&quot; p-Grad Politype 4H Online Hersteller

100.0mm Silikon-Karbid-Kristall 4" p-Grad Politype 4H
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100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without ... Lesen Sie weiter
2022-10-09 10:12:00
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GaN Epitaxial Wafer

Gesichts-F.E. 2inch GaN Epitaxial Wafer C lackierte SI Art freie Stellung

F.E. lackierte GaN Substrates Resistivity > 10 ⁶ Ω·Cm Rf-Geräte

2-Zoll-freistehende SI-GaN-Substrate

Sic Epitaxial- Oblate

Abschrägen von SiC-Epitaxialwafern 150,0 mm +0 mm/-0,2 mm 350,0 um ± 25,0 um

4H-Kristallform-SiC-Epitaxie-Wafer Kantenabschrägung 350,0 µm ± 25,0 µm

Einzelner Kristall-sic Epitaxial- Oblaten-C-Gesichts-optischer polnischer Si-Gesicht CMP

NACHRICHT HINTERLASSEN

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