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Polytyp Keine Zulässig SiC-Epitaxie-Wafer P-MOS P-SBD D-Qualität2024-10-29 11:49:58 |
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sic Epitaxial- Oblate 6inch2022-10-09 16:56:20 |
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150.0mm +0mm/-0.2mm sic Epitaxial- Oblate keine Sekundärebene 3mm2024-10-29 11:49:58 |
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350 um 4H SiC-Substrat2022-10-09 16:57:57 |
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Sic n-Art Substrat2022-10-09 16:57:15 |
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Front Surface Roughness GaN On Silicon Wafer GaN Substrate2022-10-08 17:19:48 |
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6-Zoll-4H-SiC-Substrat N Typ P SBD-Qualität 350 μm2022-10-24 10:23:04 |